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PD - 9.1221
IRF1310S
HEXFET(R) Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175C Operating Temperature Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
VDSS = 100V RDS(on) = 0.04 ID = 41A
SMD-220
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 25C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
41 29 160 170 3.8 1.1 0.025 20 230 41 17 5.5 -55 to + 175 300 (1.6mm from case)
Units
A
W W/C V mJ A mJ V/ns C
VGS EAS IAR EAR dv/dt TJ, TSTG
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB Mount)** Junction-to-Ambient
Min.
---- ---- ----
Typ.
---- ---- ----
Max.
0.90 40 62
Units
C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
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IRF1310S
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)DSS
V(BR)DSS/TJ
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 100 --- --- 2.0 12 --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.10 --- --- --- --- --- --- --- --- --- --- 13 77 82 64 4.5 7.5
--- 2500 --- 630 --- 130
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.04 VGS = 10V, ID = 25A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 25A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 25A 18 nC VDS = 80V 42 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 25A ns --- RG = 9.1 --- RD = 2.0, See Fig. 10 Between lead, --- 6mm (0.25in.) nH from package --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 140 0.79 41 A 160 2.5 210 1.2 V ns C
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 25A, VGS = 0V TJ = 25C, IF = 25A di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 25A, di/dt 170A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%.
VDD = 25V, starting TJ = 25C, L = 3.1mH RG = 25, IAS = 25A. (See Figure 12)
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IRF1310S
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100 0
I , Drain-to-Source Current (A) D
I , Drain-to-Source Current (A) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
10 0
10
10
4.5V
4.5V
1 0.1 1
20s PULSE WIDTH TC = 25C
10 100
1 0.1 1
20s PULSE WIDTH TC = 175C
10 100
V
, Drain-to-Source Voltage (V) DS
V , Drain-to-Source Voltage (V) DS
Fig 1. Typical Output Characteristics, TC = 25oC
Fig 2. Typical Output Characteristics, TC = 175oC
R DS(on) , Drain-to-Source On Resistance (Normalized)
1000
3.0
ID = 25A
I D , D ra in-to-So urce Current (A )
2.5
T J = 2 5C
100
2.0
TJ = 1 7 5C
1.5
10
1.0
0.5
1 4 5 6 7
V DS = 50V 2 0 s P U L S E W ID TH
8 9 10
0.0 -6 0 -4 0 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
V G S , G a te-to-S o urce V olta ge (V )
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF1310S
4 00 0
, Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz Ciss = Cgs + C gd , Cds SHORTED Crss = C gd Coss = C ds + C gd
20
I D = 25A V DS = 80V V DS = 50V V DS = 20V
16
C, Capacitance (pF)
3 00 0
Ciss
12
2 00 0
Coss
1 00 0
8
GS
4
Crss
0 1 10 10 0 0 0 30 60
V
FOR TEST CIRCUIT SEE FIGURE 13
90 12 0
V DS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
ID , Drain Current (A)
10s
100
100
TJ = 175C TJ = 25C
10
100s
10
1ms
10ms
1 0 0.5 1 1.5
VGS = 0V
2 2.5
1 1
TC = 25C TJ = 175C Single Pulse
10
100ms
100
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF1310S
VDS
50
RD
VGS RG
D.U.T. VDD
ID, Drain Current (Amps)
40
10 V
30
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
20
10
0 25 50 75 100 125 150 175
TC , Case Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0 .5 0
T herm al Re spo nse (Z thJC )
0 .2 0
0.1
0 .1 0
PD M
0 .0 5
t
0 .0 2 0 .0 1 S ING L E PU L S E (T H E R M A L R E S P O N S E )
N o te s : 1 . D u ty fa c to r D = t / t 12
1
t 2
0.01 0.00001
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0 .001
0.01
0.1
1
10
t 1 , R ectang ular Pulse D uration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF1310S
EAS , Single Pulse Avalanche Energy (mJ)
600
TOP
500
ID 10A 18A BOTTOM 25A
10 V
400
Fig 12a. Unclamped Inductive Test Circuit
300
200
100
0
VDD = 50V
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (C)
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRF1310S
Package Outline
SMD-220 Outline
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IRF1310S
Part Marking Information
Package Outline
SMD-220 Tape and Reel
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data and specifications subject to change without notice.
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